gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 features ? gan on sic depletion - mode transistor technology ? internally matched ? common - source configuration ? broadband class ab operation ? rohs* compliant and 260c reflow compatible ? +50 v typical operation ? mttf = 600 years (t j < 200c) applications ? civilian air traffic control (atc), l - band secondary radar for iff and mode - s avionics. ? military radar for iff and data links. description the magx - 001090 - 600l00 is a gold metalized matched gallium nitride (gan) on silicon carbide (sic) rf power transistor optimized for pulsed avionics and radar applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for todays demanding application needs. high breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * restrictions on hazardous substances, european union directive 2002/95/ec. part number description magx - 001090 - 600l00 600 w gan power transistor (production) magx - 001090 - sb0ppr 1.03 - 1.09 ghz evaluation board ordering information
gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 typical rf performance under standard operating conditions, p out = 600 w (peak) electrical characteristics: t a = 25c electrical specifications: freq. = 1030 - 1090 mhz, t a = 25c freq (mhz) p in (w) gain (db) i d (a) eff. (%) rl (db) droop (db) +1db od (w) vswr - s (3:1) vswr - t (5:1) 1030 4.95 20.8 20.4 58.6 - 16.8 0.24 649 s p 1090 4.50 21.3 18.6 64.4 - 11.0 0.23 661 s p parameter test conditions symbol min. typ. max. units rf functional tests: standard pulse conditions: v dd = 50 v, i dq = 600 ma; pulse = 32 s / 2% input power p out = 600 w peak (12 w avg.) p in - 4.3 6.7 wpk power gain p out = 600 w peak (12 w avg.) g p 19.5 21.4 - db drain efficiency p out = 600 w peak (12 w avg.) d 55 63 - % pulse droop p out = 600 w peak (12 w avg.) droop - 0.2 0.3 db load mismatch stability p out = 600 w peak (12 w avg.) vswr - s - 3:1 - - load mismatch tolerance p out = 600 w peak (12 w avg.) vswr - t - 5:1 - - mode - s elm pulse width conditions 1 : v dd = 50 v, i dq = 400 ma; 48 pulses of 32 s on and 18 s off, repeat every 24 ms; overall duty factor = 6.4% input power p out = 550 w peak (35.2 w avg.) p in - 4.6 - wpk power gain p out = 550 w peak (35.2 w avg.) g p - 20.7 - db drain efficiency p out = 550 w peak (35.2 w avg.) d - 61 - % 1. for mode - s elm pulse conditions, rf power is measured at the middle of the 25th pulse in the burst (t ~ 1.216 ms) parameter test conditions symbol min. typ. max. units dc characteristics: drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - 1.0 30 ma gate threshold voltage v ds = 5 v, i d = 75 ma v gs (th) - 5 - 3.1 - 2 v forward transconductance v ds = 5 v, i d = 17.5 ma g m 12.5 19.2 - s dynamic characteristics: input capacitance not applicable - input matched c iss n/a n/a n/a pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 55 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 5.5 - pf
gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 3 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 absolute maximum ratings 2,3,4,5 2. operation of this device above any one of these parameters may cause permanent damage. 3. input power limit is +3 db over nominal drive required to achieve p out = 600 w. 4. channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lifet ime . 5. for saturated performance it recommended that the sum of (3*v dd + abs(v gg )) <175 v. parameter limit supply voltage (v dd ) +65 v supply voltage (v gs ) - 8 to - 2 v supply current (i dmax ) 82 a input power (p in ) p in (nominal) + 3 db absolute max. junction/channel temp 200oc pulsed power dissipation at 85 oc 2.3 kw thermal resistance, (t j = 70 oc) v dd = 50 v, i dq = 600 ma, pout = 600 w, 32 s pulse / 2% duty 0.05 oc/w operating temp - 40 to +95oc storage temp - 65 to +150oc mounting temperature see solder reflow profile esd min. - charged device model (cdm) 1300 v esd min. - human body model (hbm) 4000 v correct device sequencing test fixture impedances f (mhz) z if ( ) z of ( ) 1030 1.1 - j1.5 1.5 + j0.5 1060 1.1 - j1.4 1.5 + j0.6 1090 1.1 - j1.3 1.5 + j0.6 turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 4 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 test fixture circuit dimensions test fixture assembly contact factory for gerber file or additional circuit information.
gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 5 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rf power transfer curve (output power vs. input power) rf power transfer curve (drain efficiency vs. output power)
gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 6 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 typical rf data with mode - s elm pulse conditions: 48 pulses of 32 s on and 18 s off, repeat every 24ms; overall duty factor = 6.4% v dd = 50 v; i dq = 400 ma
gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 7 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 outline drawing
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